NEMST-RIE2018 series

Reactive Ion Etching Plasma Machine

Patented High-Density ICP Plasma Source: ~ion density about 10¹¹~10¹³/cm³.
Single-side treatment in 1 cycle.
Unique Distribution Panel Design is employed to ensure uniform plasma generation.
The bias (DC Pulse or RF) is applied to the product holder.
An adjustable electrode gap is available.
Big Area RIE is available.
End Point Detection is available.
The system can be configured to a pure ICP source for remote plasma application.

Achieves anisotropic etching with high aspect ratios.
Scalable for 6", 8", and 12" wafers, with a maximum panel size of 660 mm x 660 mm, customizable to client needs.
Utilizes radicals or ions for high-speed etching.
Exceptional etching uniformity (reaching 93% or higher).
Generates high-density plasma under low-pressure conditions.
Independent control of plasma density and ion energy bias.

Polymer Materials: Polyimide (PI), Parylene, FR4, BT, Teflon (PTFE), etc.
Silicon-based Materials: Single-crystal Silicon (Si), Polysilicon (Poly-Si), Amorphous Silicon (a-Si).
Passivation & Protective Layers: Silicon Nitride (Si₃N₄), Silicon Oxynitride (SiON).
Dielectric Materials: Silicon Dioxide (SiO₂), High-k and Low-k materials.
Compound Semiconductors: GaN, SiC, GaAs, InP, and other third-generation semiconductor materials.
Metals & Alloys: Aluminum (Al), Titanium (Ti), related alloys, and barrier metals.
Special Materials: Sapphire, Diamond, ITO conductive films, PZT piezoelectric materials.
Advanced Packaging: CoWoS, 2.5D/3D IC, FOWLP, FOPLP.
IC Substrate Technologies: mSAP (Modified Semi-Additive Process), ABF/BT substrate processes.
Display Applications: Micro-LED structural etching, surface activation, and cleaning.
Peripheral Processes: Wafer Reclaim, various types of photoresist removal (Ashing).
Surface Treatment: Surface activation, roughness improvement, hydrophilic/hydrophobic modification.

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